TPN2010FNH,L1Q Mode
Espesifikasyon pou TPN2010FNH,L1Q
Nimewo pati : TPN2010FNH,L1Q
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 250V 5.6A 8TSON
Seri : U-MOSVIII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 250V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 198 mOhm @ 2.8A, 10V
Vgs (th) (Max) @ Id : 4V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 7nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 600pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta), 39W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-TSON Advance (3.3x3.3)
Pake / Ka : 8-PowerVDFN
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 250V 5.6A 8TSON
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
734075 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen TPN2010FNH,L1Q nan stock pou vann.
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- EMS: 5-8 days.
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pwodwi ki gen rapò pou TPN2010FNH,L1Q Toshiba Semiconductor and Storage
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Xilinx Inc. | IC CPLD 512MC 9NS 324BGA | ||
| Intel | IC CPLD 1700MC 7NS 324FBGA | ||
| Lattice Semiconductor Corporation | IC CPLD 256MC 7.5NS 272BGA | ||
| Intel | IC CPLD 1700MC 7NS 324FBGA | ||
| Intel | IC CPLD 980MC 6.2NS 256FBGA | ||
| Lattice Semiconductor Corporation | IC CPLD 512MC 5NS 176TQFP | ||
| Xilinx Inc. | IC CPLD 512MC 9NS 256BGA | ||
| Xilinx Inc. | IC CPLD 512MC 9NS 208QFP | ||
| Intel | IC CPLD 1700MC 7NS 324FBGA | ||
| Intel | IC CPLD 512MC 10NS 256FBGA |