TPH6R30ANL,L1Q Mode
Espesifikasyon pou TPH6R30ANL,L1Q
Nimewo pati : TPH6R30ANL,L1Q
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : X35 PB-F POWER MOSFET TRANSISTOR
Seri : U-MOSVIII-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 100V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 66A (Ta), 45A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 6.3 mOhm @ 22.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 55nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4300pF @ 50V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.5W (Ta), 54W (Tc)
Operating Tanperati : 150°C
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-SOP Advance (5x5)
Pake / Ka : 8-PowerVDFN
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
X35 PB-F POWER MOSFET TRANSISTOR
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1102320 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen TPH6R30ANL,L1Q nan stock pou vann.
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pwodwi ki gen rapò pou TPH6R30ANL,L1Q Toshiba Semiconductor and Storage
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Lattice Semiconductor Corporation | IC CPLD 256MC 10NS 208QFP | ||
| Lattice Semiconductor Corporation | IC CPLD 64MC 15NS 44TQFP | ||
| Xilinx Inc. | IC CPLD 512MC 7.1NS 256FTBGA | ||
| Intel | IC CPLD 64MC 4.5NS 100TQFP | ||
| Xilinx Inc. | IC CPLD 512MC 10.8NS 208QFP | ||
| Intel | IC CPLD 192MC 20NS 160PGA | ||
| Intel | IC CPLD 512MC 10NS 144TQFP | ||
| Intel | IC CPLD 256MC 7.5NS 100FBGA | ||
| Xilinx Inc. | IC CPLD 512MC 9.2NS 208QFP | ||
| Intel | IC CPLD 64MC 10NS 100FBGA |