TPH6400ENH,L1Q PDF Mode Download - MOSFET N-CH 200V 21A 8-SOP

Espesifikasyon pou TPH6400ENH,L1Q

Nimewo pati : TPH6400ENH,L1Q

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 200V 21A 8-SOP

Seri : U-MOSVIII-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 200V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 64 mOhm @ 6.5A, 10V

Vgs (th) (Max) @ Id : 4V @ 300µA

Chaje Gate (Qg) (Max) @ Vgs : 11.2nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1100pF @ 100V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1.6W (Ta), 57W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOP Advance (5x5)

Pake / Ka : 8-PowerVDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TPH6400ENH,L1Q

Entèn Nimewo Pati

AX-TPH6400ENH,L1Q

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 200V 21A 8-SOP

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Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

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pwodwi ki gen rapò pou TPH6400ENH,L1Q Toshiba Semiconductor and Storage

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