TPCF8102(TE85L,F,M Mode
Espesifikasyon pou TPCF8102(TE85L,F,M
Nimewo pati : TPCF8102(TE85L,F,M
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 20V 6A VS8 2-3U1A
Seri : U-MOSIII
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 6A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 30 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 1.2V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 1550pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : VS-8 (2.9x1.5)
Pake / Ka : 8-SMD, Flat Lead
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 20V 6A VS8 2-3U1A
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
6936 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou TPCF8102(TE85L,F,M Toshiba Semiconductor and Storage
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