TPC8115(TE12L,Q,M) PDF Mode Download - MOSFET P-CH 20V 10A SOP8 2-6J1B

Espesifikasyon pou TPC8115(TE12L,Q,M)

Nimewo pati : TPC8115(TE12L,Q,M)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET P-CH 20V 10A SOP8 2-6J1B

Seri : U-MOSIV

Estati Pati : Obsolete

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 20V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V

RD sou (Max) @ Id, Vgs : 10 mOhm @ 5A, 4.5V

Vgs (th) (Max) @ Id : 1.2V @ 200µA

Chaje Gate (Qg) (Max) @ Vgs : 115nC @ 5V

Vgs (Max) : ±8V

Antre kapasite (Ciss) (Max) @ Vds : 9130pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 1W (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-SOP (5.5x6.0)

Pake / Ka : 8-SOIC (0.173", 4.40mm Width)

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TPC8115(TE12L,Q,M)

Entèn Nimewo Pati

AX-TPC8115(TE12L,Q,M)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET P-CH 20V 10A SOP8 2-6J1B

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

6888 moso

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pwodwi ki gen rapò pou TPC8115(TE12L,Q,M) Toshiba Semiconductor and Storage

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TPC8115(TE12L,Q,M) Mode

Espesifikasyon pou TPC8115(TE12L,Q,M)

pwodwi ki gen rapò pou TPC8115(TE12L,Q,M) Toshiba Semiconductor and Storage