TPC6109-H(TE85L,FM Mode
Espesifikasyon pou TPC6109-H(TE85L,FM
Nimewo pati : TPC6109-H(TE85L,FM
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 30V 5A VS-6
Seri : U-MOSIII-H
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 59 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id : 1.2V @ 200µA
Chaje Gate (Qg) (Max) @ Vgs : 12.3nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 490pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : VS-6 (2.9x2.8)
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 30V 5A VS-6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
5800 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen TPC6109-H(TE85L,FM nan stock pou vann.
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- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou TPC6109-H(TE85L,FM Toshiba Semiconductor and Storage
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Xilinx Inc. | IC CPLD 512MC 10.8NS 208QFP | ||
| Xilinx Inc. | IC CPLD 384MC 9NS 256BGA | ||
| Intel | IC CPLD 128MC 5NS 144TQFP | ||
| Microchip Technology | IC CPLD 24MC 20NS 44JLCC | ||
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| Intel | IC CPLD 256MC 10NS 208QFP | ||
| Xilinx Inc. | IC CPLD 384MC 9NS 256BGA | ||
| Lattice Semiconductor Corporation | IC CPLD 192MC 6NS 144TQFP | ||
| Xilinx Inc. | IC CPLD 384MC 10.8NS 208QFP | ||
| Intel | IC CPLD 128MC 10NS 100FBGA |