TPC6009-H(TE85L,FM Mode
Espesifikasyon pou TPC6009-H(TE85L,FM
Nimewo pati : TPC6009-H(TE85L,FM
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 40V 5.3A VS6
Seri : U-MOSVI-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.3A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 81 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 100µA
Chaje Gate (Qg) (Max) @ Vgs : 4.7nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 290pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 700mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : VS-6 (2.9x2.8)
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 40V 5.3A VS6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
12808 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou TPC6009-H(TE85L,FM Toshiba Semiconductor and Storage
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