TK8A55DA(STA4,Q,M) PDF Mode Download - MOSFET N-CH 550V 7.5A TO-220SIS

Espesifikasyon pou TK8A55DA(STA4,Q,M)

Nimewo pati : TK8A55DA(STA4,Q,M)

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 550V 7.5A TO-220SIS

Seri : π-MOSVII

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 550V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 7.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 1.07 Ohm @ 3.8A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 16nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 800pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 40W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220SIS

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TK8A55DA(STA4,Q,M)

Entèn Nimewo Pati

AX-TK8A55DA(STA4,Q,M)

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 550V 7.5A TO-220SIS

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

326995 moso

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pwodwi ki gen rapò pou TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage

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LC4384V-5FTN256I	Lattice Semiconductor Corporation	IC CPLD 384MC 5NS 256FTBGA
XCR3512XL-10PQ208I	Xilinx Inc.	IC CPLD 512MC 9NS 208QFP
EPM7256AETC100-5N	Intel	IC CPLD 256MC 5.5NS 100TQFP
XCR3512XL-10FTG256I	Xilinx Inc.	IC CPLD 512MC 9NS 256BGA
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EPM7064QC100-15MM	Intel	IC CPLD 64MC 15NS 100QFP
XC2C512-10FT256I	Xilinx Inc.	IC CPLD 512MC 9.2NS 256BGA

TK8A55DA(STA4,Q,M) Mode

Espesifikasyon pou TK8A55DA(STA4,Q,M)

pwodwi ki gen rapò pou TK8A55DA(STA4,Q,M) Toshiba Semiconductor and Storage