TK62N60W,S1VF Mode
Espesifikasyon pou TK62N60W,S1VF
Nimewo pati : TK62N60W,S1VF
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 600V 61.8A TO-247
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 61.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 40 mOhm @ 30.9A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 3.1mA
Chaje Gate (Qg) (Max) @ Vgs : 180nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 6500pF @ 300V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 400W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-247
Pake / Ka : TO-247-3
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 600V 61.8A TO-247
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
37734 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen TK62N60W,S1VF nan stock pou vann.
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pwodwi ki gen rapò pou TK62N60W,S1VF Toshiba Semiconductor and Storage
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|---|---|---|---|
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| Intel | IC CPLD 64MC 4.5NS 100TQFP |