TK4R4P06PL,RQ Mode
Espesifikasyon pou TK4R4P06PL,RQ
Nimewo pati : TK4R4P06PL,RQ
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CHANNEL 60V 58A DPAK
Seri : U-MOSIX-H
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 58A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.4 mOhm @ 29A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 48.2nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3280pF @ 30V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 87W (Tc)
Operating Tanperati : 175°C
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CHANNEL 60V 58A DPAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
732460 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou TK4R4P06PL,RQ Toshiba Semiconductor and Storage
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