TK16E60W,S1VX Mode
Espesifikasyon pou TK16E60W,S1VX
Nimewo pati : TK16E60W,S1VX
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 600V 15.8A TO-220
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 15.8A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 190 mOhm @ 7.9A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 790µA
Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1350pF @ 300V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 130W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220
Pake / Ka : TO-220-3
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N CH 600V 15.8A TO-220
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
119285 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen TK16E60W,S1VX nan stock pou vann.
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- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou TK16E60W,S1VX Toshiba Semiconductor and Storage
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Intel | IC CPLD 1700MC 7NS 324FBGA | ||
| Intel | IC CPLD 128MC 5NS 144TQFP | ||
| Xilinx Inc. | IC CPLD 384MC 9NS 208QFP | ||
| Xilinx Inc. | IC CPLD 512MC 9NS 256BGA | ||
| Xilinx Inc. | IC CPLD 512MC 9.2NS 256BGA | ||
| Xilinx Inc. | IC CPLD 384MC 10.8NS 144QFP | ||
| Intel | IC CPLD 256MC 10NS 208QFP | ||
| Lattice Semiconductor Corporation | IC CPLD 256MC 7.5NS 272BGA | ||
| Cypress Semiconductor Corp | IC CPLD 32MC 12NS 44LQFP | ||
| Xilinx Inc. | IC CPLD 512MC 7.1NS 256FTBGA |