TK12A60W,S4VX PDF Mode Download - MOSFET N CH 600V 11.5A TO-220SIS

Espesifikasyon pou TK12A60W,S4VX

Nimewo pati : TK12A60W,S4VX

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N CH 600V 11.5A TO-220SIS

Seri : DTMOSIV

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 600V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.5A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 300 mOhm @ 5.8A, 10V

Vgs (th) (Max) @ Id : 3.7V @ 600µA

Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V

Vgs (Max) : ±30V

Antre kapasite (Ciss) (Max) @ Vds : 890pF @ 300V

Karakteristik FET : Super Junction

Disipasyon Pouvwa (Max) : 35W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220SIS

Pake / Ka : TO-220-3 Full Pack

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TK12A60W,S4VX

Entèn Nimewo Pati

AX-TK12A60W,S4VX

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N CH 600V 11.5A TO-220SIS

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

145320 moso

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pwodwi ki gen rapò pou TK12A60W,S4VX Toshiba Semiconductor and Storage

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Espesifikasyon pou TK12A60W,S4VX

pwodwi ki gen rapò pou TK12A60W,S4VX Toshiba Semiconductor and Storage