TK11A65W,S5X Mode
Espesifikasyon pou TK11A65W,S5X
Nimewo pati : TK11A65W,S5X
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N-CH 650V 11.1A TO-220
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11.1A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 390 mOhm @ 5.5A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 450µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 890pF @ 300V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 35W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220SIS
Pake / Ka : TO-220-3 Full Pack
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-TK11A65W,S5X
Fabricant
Kout Deskripsyon
MOSFET N-CH 650V 11.1A TO-220
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
226985 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou TK11A65W,S5X Toshiba Semiconductor and Storage
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|---|---|---|---|
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| Xilinx Inc. | IC CPLD 512MC 10.8NS 256BGA |