TK10P60W,RVQ Mode
Espesifikasyon pou TK10P60W,RVQ
Nimewo pati : TK10P60W,RVQ
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET N CH 600V 9.7A DPAK
Seri : DTMOSIV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 9.7A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 430 mOhm @ 4.9A, 10V
Vgs (th) (Max) @ Id : 3.7V @ 500µA
Chaje Gate (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 700pF @ 300V
Karakteristik FET : Super Junction
Disipasyon Pouvwa (Max) : 80W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-TK10P60W,RVQ
Fabricant
Kout Deskripsyon
MOSFET N CH 600V 9.7A DPAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
374855 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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- TNT: 3-5 days.
- EMS: 5-8 days.
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pwodwi ki gen rapò pou TK10P60W,RVQ Toshiba Semiconductor and Storage
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