TK100E08N1,S1X PDF Mode Download - MOSFET N-CH 80V 100A TO220

Espesifikasyon pou TK100E08N1,S1X

Nimewo pati : TK100E08N1,S1X

Fabricant : Toshiba Semiconductor and Storage

Deskripsyon : MOSFET N-CH 80V 100A TO220

Seri : U-MOSVIII-H

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 80V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 100A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 3.2 mOhm @ 50A, 10V

Vgs (th) (Max) @ Id : 4V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 130nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 9000pF @ 40V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 255W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-220

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

TK100E08N1,S1X

Entèn Nimewo Pati

AX-TK100E08N1,S1X

Fabricant

Toshiba Semiconductor and Storage

Kout Deskripsyon

MOSFET N-CH 80V 100A TO220

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

83495 moso

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pwodwi ki gen rapò pou TK100E08N1,S1X Toshiba Semiconductor and Storage

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TK100E08N1,S1X Mode

Espesifikasyon pou TK100E08N1,S1X

pwodwi ki gen rapò pou TK100E08N1,S1X Toshiba Semiconductor and Storage