TJ10S04M3L(T6L1,NQ Mode
Espesifikasyon pou TJ10S04M3L(T6L1,NQ
Nimewo pati : TJ10S04M3L(T6L1,NQ
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 40V 10A DPAK-3
Seri : U-MOSVI
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 40V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 6V, 10V
RD sou (Max) @ Id, Vgs : 44 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 3V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 19nC @ 10V
Vgs (Max) : +10V, -20V
Antre kapasite (Ciss) (Max) @ Vds : 930pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 27W (Tc)
Operating Tanperati : 175°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : DPAK+
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 40V 10A DPAK-3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
954295 moso
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pwodwi ki gen rapò pou TJ10S04M3L(T6L1,NQ Toshiba Semiconductor and Storage
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