STS8C5H30L Mode
Espesifikasyon pou STS8C5H30L
Nimewo pati : STS8C5H30L
Fabricant : STMicroelectronics
Deskripsyon : MOSFET N/P-CH 30V 8A/5.4A 8SOIC
Seri : STripFET™ III
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A, 5.4A
RD sou (Max) @ Id, Vgs : 22 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 10nC @ 5V
Antre kapasite (Ciss) (Max) @ Vds : 857pF @ 25V
Pouvwa - Max : 2W
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-STS8C5H30L
Fabricant
Kout Deskripsyon
MOSFET N/P-CH 30V 8A/5.4A 8SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
552795 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen STS8C5H30L nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
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pwodwi ki gen rapò pou STS8C5H30L STMicroelectronics
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