Espesifikasyon pou STGWT30V60DF

Nimewo pati : STGWT30V60DF
Fabricant : STMicroelectronics
Deskripsyon : IGBT 600V 60A 258W TO3P-3
Seri : -
Estati Pati : Active
Kalite IGBT : Trench Field Stop
Voltage - Pèseptè ki emèt deba (Max) : 600V
Kouran - Pèseptè (Ic) (Max) : 60A
Kouran - Pèseptè batman (Icm) : 120A
Vce (sou) (Max) @ Vge, Ic : 2.3V @ 15V, 30A
Pouvwa - Max : 258W
Oblije chanje enèji : 383µJ (on), 233µJ (off)
Kalite Antre : Standard
Gate chaje : 163nC
Td (on / off) @ 25 ° C : 45ns/189ns
Kondisyon egzamen an : 400V, 30A, 10 Ohm, 15V
Ranvèse Tan Reverse (trr) : 53ns
Operating Tanperati : -55°C ~ 175°C (TJ)
Mounting Kalite : Through Hole
Pake / Ka : TO-3P-3, SC-65-3
Pake Aparèy Founisè : TO-3P
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
IGBT 600V 60A 258W TO3P-3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
125355 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen STGWT30V60DF nan stock pou vann.
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TNT: 3-5 days.
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Normal Post: 10-15 days.
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