SSM6J207FE,LF Mode
Espesifikasyon pou SSM6J207FE,LF
Nimewo pati : SSM6J207FE,LF
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : MOSFET P-CH 30V 1.4A ES6
Seri : U-MOSII
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.4A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 251 mOhm @ 650mA, 10V
Vgs (th) (Max) @ Id : 2.6V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 137pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 500mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : ES6 (1.6x1.6)
Pake / Ka : SOT-563, SOT-666
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 30V 1.4A ES6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
3882165 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou SSM6J207FE,LF Toshiba Semiconductor and Storage
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