SPP11N60C3XKSA1 PDF Mode Download - MOSFET N-CH 650V 11A TO-220AB

Espesifikasyon pou SPP11N60C3XKSA1

Nimewo pati : SPP11N60C3XKSA1

Fabricant : Infineon Technologies

Deskripsyon : MOSFET N-CH 650V 11A TO-220AB

Seri : CoolMOS™

Estati Pati : Not For New Designs

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 650V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 11A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 380 mOhm @ 7A, 10V

Vgs (th) (Max) @ Id : 3.9V @ 500µA

Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 1200pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 125W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : PG-TO220-3-1

Pake / Ka : TO-220-3

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

SPP11N60C3XKSA1

Entèn Nimewo Pati

AX-SPP11N60C3XKSA1

Fabricant

Infineon Technologies

Kout Deskripsyon

MOSFET N-CH 650V 11A TO-220AB

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

132840 moso

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pwodwi ki gen rapò pou SPP11N60C3XKSA1 Infineon Technologies

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Espesifikasyon pou SPP11N60C3XKSA1

pwodwi ki gen rapò pou SPP11N60C3XKSA1 Infineon Technologies