Espesifikasyon pou SIRA84DP-T1-GE3

Nimewo pati : SIRA84DP-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 30V 60A POWERPAKSO-8
Seri : TrenchFET® Gen IV
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 60A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.6 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id : 2.4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : +20V, -16V
Antre kapasite (Ciss) (Max) @ Vds : 1535pF @ 15V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 34.7W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SO-8
Pake / Ka : PowerPAK® SO-8
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 30V 60A POWERPAKSO-8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2092575 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SIRA84DP-T1-GE3 nan stock pou vann.
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