SIJ494DP-T1-GE3 Mode
Espesifikasyon pou SIJ494DP-T1-GE3
Nimewo pati :
SIJ494DP-T1-GE3
Fabricant :
Vishay Siliconix
Deskripsyon :
MOSFET N-CH 150V 36.8A SO-8
Seri :
ThunderFET®
Estati Pati :
Active
FET Kalite :
N-Channel
Teknoloji :
MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) :
150V
Kouran - Drenaj Kontinye (Id) @ 25 ° C :
36.8A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) :
7.5V, 10V
RD sou (Max) @ Id, Vgs :
23.2 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Antre kapasite (Ciss) (Max) @ Vds :
1070pF @ 75V
Karakteristik FET :
-
Disipasyon Pouvwa (Max) :
69.4W (Tc)
Operating Tanperati :
-55°C ~ 150°C (TJ)
Mounting Kalite :
Surface Mount
Pake Aparèy Founisè :
PowerPAK® SO-8
Pake / Ka :
PowerPAK® SO-8
Pwa :
-
kondisyon :
Nouvo ak orijinal
Kalite Garanti :
365 jou garanti
stock Resous :
Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI :
USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 150V 36.8A SO-8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
607885 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SIJ494DP-T1-GE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou SIJ494DP-T1-GE3 Vishay Siliconix
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|---|---|---|---|
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Xilinx Inc. |
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