SIHP12N65E-GE3 Mode
Espesifikasyon pou SIHP12N65E-GE3
Nimewo pati : SIHP12N65E-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N-CH 650V 12A TO-220AB
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 650V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 380 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 70nC @ 10V
Vgs (Max) : ±30V
Antre kapasite (Ciss) (Max) @ Vds : 1224pF @ 100V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 156W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220AB
Pake / Ka : TO-220-3
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 650V 12A TO-220AB
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
179150 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SIHP12N65E-GE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou SIHP12N65E-GE3 Vishay Siliconix
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Intel | IC CPLD 512MC 12NS 256FBGA | ||
| Lattice Semiconductor Corporation | IC CPLD 512MC 7.5NS 256FTBGA | ||
| Intel | IC CPLD 1700MC 7NS 256FBGA | ||
| Xilinx Inc. | IC CPLD 512MC 9NS 256BGA | ||
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| Xilinx Inc. | IC CPLD 512MC 9NS 256BGA | ||
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| Lattice Semiconductor Corporation | IC CPLD 512MC 10NS 388FBGA | ||
| Xilinx Inc. | IC CPLD 512MC 9NS 256BGA |