SICR10650CT Mode
Espesifikasyon pou SICR10650CT
Nimewo pati : SICR10650CT
Fabricant : SMC Diode Solutions
Deskripsyon : DIODE SCHOTTKY SILICON CARBIDE S
Seri : -
Estati Pati : Active
Kalite dyòd : Silicon Carbide Schottky
Voltage - DC Ranvèse (Vr) (Max) : 650V
Kouran - Mwayèn Rèktifye (Io) : 5A
Voltage - Forward (Vf) (Max) @ Si : 1.7V @ 5A
Vitès : No Recovery Time > 500mA (Io)
Ranvèse Tan Reverse (trr) : 0ns
Kouran - Fèy Reverse @ Vr : 60µA @ 650V
Kapasite @ Vr, F : -
Mounting Kalite : Through Hole
Pake / Ka : TO-220-3
Pake Aparèy Founisè : TO-220AB
Operating Tanperati - Junction : -55°C ~ 175°C
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-SICR10650CT
Fabricant
Kout Deskripsyon
DIODE SCHOTTKY SILICON CARBIDE S
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
68860 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SICR10650CT nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou SICR10650CT SMC Diode Solutions
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Intel | IC CPLD 512MC 10NS 256FBGA | ||
| Lattice Semiconductor Corporation | IC CPLD 256MC 6.5NS 208QFP | ||
| Intel | IC CPLD 512MC 10NS 208QFP | ||
| Intel | IC CPLD 256MC 7.5NS 144TQFP | ||
| Intel | IC CPLD 256MC 7.5NS 208QFP | ||
| Intel | IC CPLD 256MC 5.5NS 100TQFP | ||
| Xilinx Inc. | IC CPLD 384MC 7NS 208QFP | ||
| Intel | IC CPLD 64MC 4.5NS 100TQFP | ||
| Intel | IC CPLD 256MC 7.5NS 100TQFP | ||
| Lattice Semiconductor Corporation | IC CPLD 32MC 5NS 48TQFP |