SIA427DJ-T1-GE3 Mode
Espesifikasyon pou SIA427DJ-T1-GE3
Nimewo pati : SIA427DJ-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET P-CH 8V 12A SC-70-6
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 8V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 12A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.2V, 4.5V
RD sou (Max) @ Id, Vgs : 16 mOhm @ 8.2A, 4.5V
Vgs (th) (Max) @ Id : 800mV @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 50nC @ 5V
Vgs (Max) : ±5V
Antre kapasite (Ciss) (Max) @ Vds : 2300pF @ 4V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.5W (Ta), 19W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® SC-70-6 Single
Pake / Ka : PowerPAK® SC-70-6
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 8V 12A SC-70-6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2072445 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SIA427DJ-T1-GE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
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pwodwi ki gen rapò pou SIA427DJ-T1-GE3 Vishay Siliconix
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Xilinx Inc. | IC CPLD 384MC 10.8NS 256BGA | ||
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