SI8900EDB-T2-E1 Mode
Espesifikasyon pou SI8900EDB-T2-E1
Nimewo pati : SI8900EDB-T2-E1
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 20V 5.4A 10-MFP
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual) Common Drain
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 5.4A
RD sou (Max) @ Id, Vgs : -
Vgs (th) (Max) @ Id : 1V @ 1.1mA
Chaje Gate (Qg) (Max) @ Vgs : -
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 10-UFBGA, CSPBGA
Pake Aparèy Founisè : 10-Micro Foot™ CSP (2x5)
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 20V 5.4A 10-MFP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
271970 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SI8900EDB-T2-E1 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou SI8900EDB-T2-E1 Vishay Siliconix
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Xilinx Inc. | IC CPLD 512MC 9NS 208QFP | ||
| Lattice Semiconductor Corporation | IC CPLD 512MC 7.5NS 256FTBGA | ||
| Xilinx Inc. | IC CPLD 384MC 10.8NS 144QFP | ||
| Intel | IC CPLD 1700MC 7NS 256FBGA | ||
| Intel | IC CPLD 512MC 7.5NS 144TQFP | ||
| Intel | IC CPLD 256MC 7.5NS 100TQFP | ||
| Xilinx Inc. | IC CPLD 384MC 10.8NS 256BGA | ||
| Intel | IC CPLD 512MC 7.5NS 256FBGA | ||
| Xilinx Inc. | IC CPLD 512MC 9.2NS 324FBGA | ||
| Intel | IC CPLD 512MC 10NS 144TQFP |