SI7405BDN-T1-GE3 Mode
Espesifikasyon pou SI7405BDN-T1-GE3
Nimewo pati : SI7405BDN-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET P-CH 12V 16A 1212-8
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 16A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 13 mOhm @ 13.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 115nC @ 8V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : 3500pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 3.6W (Ta), 33W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : PowerPAK® 1212-8
Pake / Ka : PowerPAK® 1212-8
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 12V 16A 1212-8
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
21189 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SI7405BDN-T1-GE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
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pwodwi ki gen rapò pou SI7405BDN-T1-GE3 Vishay Siliconix
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
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| Lattice Semiconductor Corporation | IC CPLD 512MC 10NS 256FBGA | ||
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