Espesifikasyon pou SI6423DQ-T1-GE3

Nimewo pati : SI6423DQ-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET P-CH 12V 8.2A 8-TSSOP
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8.2A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.8V, 4.5V
RD sou (Max) @ Id, Vgs : 8.5 mOhm @ 9.5A, 4.5V
Vgs (th) (Max) @ Id : 800mV @ 400µA
Chaje Gate (Qg) (Max) @ Vgs : 110nC @ 5V
Vgs (Max) : ±8V
Antre kapasite (Ciss) (Max) @ Vds : -
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 1.05W (Ta)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 8-TSSOP
Pake / Ka : 8-TSSOP (0.173", 4.40mm Width)
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET P-CH 12V 8.2A 8-TSSOP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
517575 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI6423DQ-T1-GE3 nan stock pou vann.
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pwodwi ki gen rapò pou SI6423DQ-T1-GE3 Vishay Siliconix

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