Espesifikasyon pou SI4622DY-T1-GE3

Nimewo pati : SI4622DY-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 30V 8A 8-SOIC
Seri : SkyFET®, TrenchFET®
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Standard
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 8A
RD sou (Max) @ Id, Vgs : 16 mOhm @ 9.6A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 60nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 2458pF @ 15V
Pouvwa - Max : 3.3W, 3.1W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SO
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 30V 8A 8-SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
27629 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SI4622DY-T1-GE3 nan stock pou vann.
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pwodwi ki gen rapò pou SI4622DY-T1-GE3 Vishay Siliconix

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