SI3590DV-T1-GE3 Mode
Espesifikasyon pou SI3590DV-T1-GE3
Nimewo pati : SI3590DV-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N/P-CH 30V 2.5A 6-TSOP
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.5A, 1.7A
RD sou (Max) @ Id, Vgs : 77 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.5nC @ 4.5V
Antre kapasite (Ciss) (Max) @ Vds : -
Pouvwa - Max : 830mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè : 6-TSOP
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N/P-CH 30V 2.5A 6-TSOP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1199450 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SI3590DV-T1-GE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
- Bank Transfer (Wire Transfer)
- Western Union
- MoneyGram
pwodwi ki gen rapò pou SI3590DV-T1-GE3 Vishay Siliconix
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