SI3585CDV-T1-GE3 Mode
Espesifikasyon pou SI3585CDV-T1-GE3
Nimewo pati : SI3585CDV-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET N/P-CH 20V 3.9A 6TSOP
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : N and P-Channel
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 3.9A, 2.1A
RD sou (Max) @ Id, Vgs : 58 mOhm @ 2.5A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.8nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 150pF @ 10V
Pouvwa - Max : 1.4W, 1.3W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pake Aparèy Founisè : 6-TSOP
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N/P-CH 20V 3.9A 6TSOP
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2158845 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SI3585CDV-T1-GE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
- Posiblite peman:
- Paypal (Credit Card)
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- Western Union
- MoneyGram
pwodwi ki gen rapò pou SI3585CDV-T1-GE3 Vishay Siliconix
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
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| Intel | IC CPLD 980MC 6.2NS 256FBGA | ||
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| Lattice Semiconductor Corporation | IC CPLD 384MC 5NS 176TQFP | ||
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| Intel | IC CPLD 512MC 12NS 256FBGA | ||
| Xilinx Inc. | IC CPLD 512MC 9NS 324BGA | ||
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