SI1988DH-T1-GE3 Mode
Espesifikasyon pou SI1988DH-T1-GE3
Nimewo pati : SI1988DH-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 20V 1.3A SC-70-6
Seri : TrenchFET®
Estati Pati : Obsolete
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 20V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.3A
RD sou (Max) @ Id, Vgs : 168 mOhm @ 1.4A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 4.1nC @ 8V
Antre kapasite (Ciss) (Max) @ Vds : 110pF @ 10V
Pouvwa - Max : 1.25W
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : SC-70-6 (SOT-363)
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 20V 1.3A SC-70-6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
27608 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SI1988DH-T1-GE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou SI1988DH-T1-GE3 Vishay Siliconix
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