SI1926DL-T1-GE3 Mode
Espesifikasyon pou SI1926DL-T1-GE3
Nimewo pati : SI1926DL-T1-GE3
Fabricant : Vishay Siliconix
Deskripsyon : MOSFET 2N-CH 60V 0.37A SOT363
Seri : TrenchFET®
Estati Pati : Active
FET Kalite : 2 N-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 370mA
RD sou (Max) @ Id, Vgs : 1.4 Ohm @ 340mA, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 1.4nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 18.5pF @ 30V
Pouvwa - Max : 510mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 6-TSSOP, SC-88, SOT-363
Pake Aparèy Founisè : SC-70-6 (SOT-363)
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET 2N-CH 60V 0.37A SOT363
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
2878465 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen SI1926DL-T1-GE3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou SI1926DL-T1-GE3 Vishay Siliconix
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Intel | IC CPLD 512MC 7.5NS 144TQFP | ||
| Xilinx Inc. | IC CPLD 512MC 10.8NS 256BGA | ||
| Intel | IC CPLD 512MC 7.5NS 144TQFP | ||
| Lattice Semiconductor Corporation | IC CPLD 512MC 5NS 176TQFP | ||
| Xilinx Inc. | IC CPLD 384MC 10.8NS 208QFP | ||
| Xilinx Inc. | IC CPLD 384MC 10.8NS 144QFP | ||
| Lattice Semiconductor Corporation | IC CPLD 512MC 5NS 176TQFP | ||
| Lattice Semiconductor Corporation | IC CPLD 96MC 5.5NS 100TQFP | ||
| Microchip Technology | IC CPLD 24MC 20NS 44JLCC | ||
| Intel | IC CPLD 512MC 10NS 256FBGA |