Espesifikasyon pou SFT13GHA0G

Nimewo pati : SFT13GHA0G
Fabricant : Taiwan Semiconductor Corporation
Deskripsyon : DIODE GEN PURP 150V 1A TS-1
Seri : Automotive, AEC-Q101
Estati Pati : Active
Kalite dyòd : Standard
Voltage - DC Ranvèse (Vr) (Max) : 150V
Kouran - Mwayèn Rèktifye (Io) : 1A
Voltage - Forward (Vf) (Max) @ Si : 950mV @ 1A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : 35ns
Kouran - Fèy Reverse @ Vr : 5µA @ 150V
Kapasite @ Vr, F : 20pF @ 4V, 1MHz
Mounting Kalite : Through Hole
Pake / Ka : T-18, Axial
Pake Aparèy Founisè : TS-1
Operating Tanperati - Junction : -55°C ~ 150°C
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE GEN PURP 150V 1A TS-1
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
7306360 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen SFT13GHA0G nan stock pou vann.
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pwodwi ki gen rapò pou SFT13GHA0G Taiwan Semiconductor Corporation

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