RW1E014SNT2R PDF Mode Download - MOSFET N-CH 30V 1.4A WEMT6

Espesifikasyon pou RW1E014SNT2R

Nimewo pati : RW1E014SNT2R

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 30V 1.4A WEMT6

Seri : -

Estati Pati : Not For New Designs

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.4A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V

RD sou (Max) @ Id, Vgs : 240 mOhm @ 1.4A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 1.4nC @ 5V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 70pF @ 10V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 700mW (Ta)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-WEMT

Pake / Ka : SOT-563, SOT-666

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

RW1E014SNT2R

Entèn Nimewo Pati

AX-RW1E014SNT2R

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 30V 1.4A WEMT6

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

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pwodwi ki gen rapò pou RW1E014SNT2R Rohm Semiconductor

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XCR3384XL-12FTG256I	Xilinx Inc.	IC CPLD 384MC 10.8NS 256BGA
EPM7512AEFC256-7N	Intel	IC CPLD 512MC 7.5NS 256FBGA

RW1E014SNT2R Mode

Espesifikasyon pou RW1E014SNT2R

pwodwi ki gen rapò pou RW1E014SNT2R Rohm Semiconductor