RS1E130GNTB PDF Mode Download - MOSFET N-CH 30V 13A 8-HSOP

Espesifikasyon pou RS1E130GNTB

Nimewo pati : RS1E130GNTB

Fabricant : Rohm Semiconductor

Deskripsyon : MOSFET N-CH 30V 13A 8-HSOP

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 13A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 11.7 mOhm @ 13A, 10V

Vgs (th) (Max) @ Id : 2.5V @ 1mA

Chaje Gate (Qg) (Max) @ Vgs : 7.9nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 420pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3W (Ta), 22.2W (Tc)

Operating Tanperati : 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 8-HSOP

Pake / Ka : 8-PowerTDFN

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

RS1E130GNTB

Entèn Nimewo Pati

AX-RS1E130GNTB

Fabricant

Rohm Semiconductor

Kout Deskripsyon

MOSFET N-CH 30V 13A 8-HSOP

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Plon gratis / RoHS Konfòm

akouchman Tan

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Disponib Kantite

2535140 moso

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RS1E130GNTB Mode

Espesifikasyon pou RS1E130GNTB

pwodwi ki gen rapò pou RS1E130GNTB Rohm Semiconductor