Espesifikasyon pou RN4987FE,LF(CT

Nimewo pati : RN4987FE,LF(CT
Fabricant : Toshiba Semiconductor and Storage
Deskripsyon : TRANS NPN/PNP PREBIAS 0.1W ES6
Seri : -
Estati Pati : Active
Kalite tranzistò : 1 NPN, 1 PNP - Pre-Biased (Dual)
Kouran - Pèseptè (Ic) (Max) : 100mA
Voltage - Pèseptè ki emèt deba (Max) : 50V
Rezistans - Sèvi (R1) : 10 kOhms
Rezistans - Sèvi ak emeteur (R2) : 47 kOhms
DC Kouran Akeri (HFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Kouran - Cutoff Pèseptè (Max) : 500nA
Frekans - Tranzisyon : 250MHz, 200MHz
Pouvwa - Max : 100mW
Mounting Kalite : Surface Mount
Pake / Ka : SOT-563, SOT-666
Pake Aparèy Founisè : ES6
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
TRANS NPN/PNP PREBIAS 0.1W ES6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
9681300 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen RN4987FE,LF(CT nan stock pou vann.
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pwodwi ki gen rapò pou RN4987FE,LF(CT Toshiba Semiconductor and Storage

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