RJK0629DPE-00#J3 Mode
Espesifikasyon pou RJK0629DPE-00#J3
Nimewo pati : RJK0629DPE-00#J3
Fabricant : Renesas Electronics America
Deskripsyon : MOSFET N-CH 60V 85A LDPAK
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 60V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 85A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 4.5 mOhm @ 43A, 10V
Vgs (th) (Max) @ Id : -
Chaje Gate (Qg) (Max) @ Vgs : 85nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 4100pF @ 10V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 100W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 4-LDPAK
Pake / Ka : SC-83
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
MOSFET N-CH 60V 85A LDPAK
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
21944 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen RJK0629DPE-00#J3 nan stock pou vann.
- D 'opsyon ak anbake tan:
- DHL: 2-3 days.
- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou RJK0629DPE-00#J3 Renesas Electronics America
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|---|---|---|---|
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