RCD100N19TL Mode
Espesifikasyon pou RCD100N19TL
Nimewo pati : RCD100N19TL
Fabricant : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 190V 10A CPT3
Seri : -
Estati Pati : Not For New Designs
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 190V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 10A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4V, 10V
RD sou (Max) @ Id, Vgs : 182 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 52nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2000pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 850mW (Ta), 20W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : CPT3
Pake / Ka : TO-252-3, DPak (2 Leads + Tab), SC-63
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-RCD100N19TL
Fabricant
Kout Deskripsyon
MOSFET N-CH 190V 10A CPT3
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
1012130 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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pwodwi ki gen rapò pou RCD100N19TL Rohm Semiconductor
| Nimewo pati | mak | Deskripsyon | Achte |
|---|---|---|---|
| Lattice Semiconductor Corporation | IC CPLD 512MC 5NS 256FTBGA | ||
| Xilinx Inc. | IC CPLD 512MC 7.1NS 256BGA | ||
| Xilinx Inc. | IC CPLD 384MC 9NS 144QFP | ||
| Intel | IC CPLD 64MC 4.5NS 100FBGA | ||
| Intel | IC CPLD 256MC 7.5NS 144TQFP | ||
| Intel | IC CPLD 1700MC 7NS 324FBGA | ||
| Intel | IC CPLD 64MC 4.5NS 100TQFP | ||
| Intel | IC CPLD 128MC 10NS 100TQFP | ||
| Intel | IC CPLD 1700MC 7NS 256FBGA | ||
| Intel | IC CPLD 512MC 10NS 144TQFP |