RAQ045P01TCR Mode
Espesifikasyon pou RAQ045P01TCR
Nimewo pati : RAQ045P01TCR
Fabricant : Rohm Semiconductor
Deskripsyon : MOSFET P-CH 12V 4.5A TUMT6
Seri : -
Estati Pati : Active
FET Kalite : P-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 12V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4.5A (Ta)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 1.5V, 4.5V
RD sou (Max) @ Id, Vgs : 30 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 40nC @ 4.5V
Vgs (Max) : -8V
Antre kapasite (Ciss) (Max) @ Vds : 4200pF @ 6V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 600mW (Ta)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : TSMT6 (SC-95)
Pake / Ka : SOT-23-6 Thin, TSOT-23-6
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-RAQ045P01TCR
Fabricant
Kout Deskripsyon
MOSFET P-CH 12V 4.5A TUMT6
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
20864 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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- FEDEX: 2-3 days.
- UPS: 2-4 days.
- TNT: 3-5 days.
- EMS: 5-8 days.
- Normal Post: 10-15 days.
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pwodwi ki gen rapò pou RAQ045P01TCR Rohm Semiconductor
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