R6030KNXC7 Mode
Espesifikasyon pou R6030KNXC7
Nimewo pati : R6030KNXC7
Fabricant : Rohm Semiconductor
Deskripsyon : MOSFET N-CH 600V 30A TO220FM
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 600V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 30A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V
RD sou (Max) @ Id, Vgs : 130 mOhm @ 14.5A, 10V
Vgs (th) (Max) @ Id : 5V @ 1mA
Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 2350pF @ 25V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 86W (Tc)
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Through Hole
Pake Aparèy Founisè : TO-220FM
Pake / Ka : TO-220-3 Full Pack
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-R6030KNXC7
Fabricant
Kout Deskripsyon
MOSFET N-CH 600V 30A TO220FM
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
125695 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
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- TNT: 3-5 days.
- EMS: 5-8 days.
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pwodwi ki gen rapò pou R6030KNXC7 Rohm Semiconductor
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|---|---|---|---|
| Intel | IC CPLD 1700MC 7NS 256FBGA | ||
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