NVMFS4C302NT1G PDF Mode Download - NFET SO8FL 30V 1.15MO

Espesifikasyon pou NVMFS4C302NT1G

Nimewo pati : NVMFS4C302NT1G

Fabricant : ON Semiconductor

Deskripsyon : NFET SO8FL 30V 1.15MO

Seri : Automotive, AEC-Q101

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 30V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 43A (Ta), 241A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 1.15 mOhm @ 30A, 10V

Vgs (th) (Max) @ Id : 2.2V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 82nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 5780pF @ 15V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 3.75W (Ta), 115W (Tc)

Operating Tanperati : -55°C ~ 175°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)

Pake / Ka : 8-PowerTDFN, 5 Leads

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

NVMFS4C302NT1G

Entèn Nimewo Pati

AX-NVMFS4C302NT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

NFET SO8FL 30V 1.15MO

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

638280 moso

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pwodwi ki gen rapò pou NVMFS4C302NT1G ON Semiconductor

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XCR3384XL-10PQ208I	Xilinx Inc.	IC CPLD 384MC 9NS 208QFP

NVMFS4C302NT1G Mode

Espesifikasyon pou NVMFS4C302NT1G

pwodwi ki gen rapò pou NVMFS4C302NT1G ON Semiconductor