NVMD3P03R2G Mode
Espesifikasyon pou NVMD3P03R2G
Nimewo pati : NVMD3P03R2G
Fabricant : ON Semiconductor
Deskripsyon : MOSFET 2P-CH 30V 2.34A 8SOIC
Seri : -
Estati Pati : Active
FET Kalite : 2 P-Channel (Dual)
Karakteristik FET : Logic Level Gate
Drenaj nan Voltage Sous (Vdss) : 30V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 2.34A
RD sou (Max) @ Id, Vgs : 85 mOhm @ 3.05A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 25nC @ 10V
Antre kapasite (Ciss) (Max) @ Vds : 750pF @ 24V
Pouvwa - Max : 730mW
Operating Tanperati : -55°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOIC
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
AX-NVMD3P03R2G
Fabricant
Kout Deskripsyon
MOSFET 2P-CH 30V 2.34A 8SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
578300 moso
referans pri
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])
- AXE Semiconductor gen NVMD3P03R2G nan stock pou vann.
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- TNT: 3-5 days.
- EMS: 5-8 days.
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pwodwi ki gen rapò pou NVMD3P03R2G ON Semiconductor
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