NVGS5120PT1G PDF Mode Download - MOSFET P-CH 60V 1.8A 6TSOP

Espesifikasyon pou NVGS5120PT1G

Nimewo pati : NVGS5120PT1G

Fabricant : ON Semiconductor

Deskripsyon : MOSFET P-CH 60V 1.8A 6TSOP

Seri : -

Estati Pati : Active

FET Kalite : P-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 60V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 1.8A (Ta)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V

RD sou (Max) @ Id, Vgs : 111 mOhm @ 2.9A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 18.1nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 942pF @ 30V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 600mW (Ta)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Surface Mount

Pake Aparèy Founisè : 6-TSOP

Pake / Ka : SOT-23-6

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

NVGS5120PT1G

Entèn Nimewo Pati

AX-NVGS5120PT1G

Fabricant

ON Semiconductor

Kout Deskripsyon

MOSFET P-CH 60V 1.8A 6TSOP

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

1200155 moso

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pwodwi ki gen rapò pou NVGS5120PT1G ON Semiconductor

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XC2C512-10FT256I	Xilinx Inc.	IC CPLD 512MC 9.2NS 256BGA
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NVGS5120PT1G Mode

Espesifikasyon pou NVGS5120PT1G

pwodwi ki gen rapò pou NVGS5120PT1G ON Semiconductor