Espesifikasyon pou NTMFS4H013NFT3G

Nimewo pati : NTMFS4H013NFT3G
Fabricant : ON Semiconductor
Deskripsyon : MOSFET N-CH 25V 35A SO8FL
Seri : -
Estati Pati : Active
FET Kalite : N-Channel
Teknoloji : MOSFET (Metal Oxide)
Drenaj nan Voltage Sous (Vdss) : 25V
Kouran - Drenaj Kontinye (Id) @ 25 ° C : 43A (Ta), 269A (Tc)
Drive Voltage (Max Rds Sou, Min RDS Sou) : 4.5V, 10V
RD sou (Max) @ Id, Vgs : 0.9 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 250µA
Chaje Gate (Qg) (Max) @ Vgs : 56nC @ 10V
Vgs (Max) : ±20V
Antre kapasite (Ciss) (Max) @ Vds : 3923pF @ 12V
Karakteristik FET : -
Disipasyon Pouvwa (Max) : 2.7W (Ta), 104W (Tc)
Operating Tanperati : 150°C (TJ)
Mounting Kalite : Surface Mount
Pake Aparèy Founisè : 5-DFN (5x6) (8-SOFL)
Pake / Ka : 8-PowerTDFN
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
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MOSFET N-CH 25V 35A SO8FL
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akouchman Tan
1-2 jou
Disponib Kantite
408745 moso
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