Espesifikasyon pou NCV33152DR2G

Nimewo pati : NCV33152DR2G
Fabricant : ON Semiconductor
Deskripsyon : IC MOSFET DRVR DUAL HS 8-SOIC
Seri : -
Estati Pati : Active
Kondwi konte genyen : Low-Side
Kalite Chèn : Independent
Kantite Chofè yo : 2
Kalite Gate : N-Channel MOSFET
Voltage - Pwovizyon pou : 6.1V ~ 18V
Vòltaj lojik - VIL, VIH : 0.8V, 2.6V
Kouran - Peak Sòti (Sous, Lavabo) : 1.5A, 1.5A
Kalite Antre : Non-Inverting
Segondè Voltage Side - Max (Bootstrap) : -
Rise / Fall Time (Tip) : 36ns, 32ns
Operating Tanperati : -40°C ~ 150°C (TJ)
Mounting Kalite : Surface Mount
Pake / Ka : 8-SOIC (0.154", 3.90mm Width)
Pake Aparèy Founisè : 8-SOIC
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
IC MOSFET DRVR DUAL HS 8-SOIC
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
770240 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen NCV33152DR2G nan stock pou vann.
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pwodwi ki gen rapò pou NCV33152DR2G ON Semiconductor

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