Espesifikasyon pou MBRTA600150R

Nimewo pati : MBRTA600150R
Fabricant : GeneSiC Semiconductor
Deskripsyon : DIODE SCHOTTKY 150V 300A 3TOWER
Seri : -
Estati Pati : Obsolete
Konfigirasyon dyòd : 1 Pair Common Anode
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 150V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 300A
Voltage - Forward (Vf) (Max) @ Si : 880mV @ 300A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 4mA @ 150V
Operating Tanperati - Junction : -55°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Three Tower
Pake Aparèy Founisè : Three Tower
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE SCHOTTKY 150V 300A 3TOWER
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
37662 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MBRTA600150R nan stock pou vann.
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pwodwi ki gen rapò pou MBRTA600150R GeneSiC Semiconductor

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