Espesifikasyon pou MBR30035CT

Nimewo pati : MBR30035CT
Fabricant : GeneSiC Semiconductor
Deskripsyon : DIODE MODULE 35V 200A 2TOWER
Seri : -
Estati Pati : Active
Konfigirasyon dyòd : 1 Pair Common Cathode
Kalite dyòd : Schottky
Voltage - DC Ranvèse (Vr) (Max) : 35V
Kouran - Mwayèn Rèktifye (Io) (pou chak dyòd) : 200A (DC)
Voltage - Forward (Vf) (Max) @ Si : 650mV @ 150A
Vitès : Fast Recovery =< 500ns, > 200mA (Io)
Ranvèse Tan Reverse (trr) : -
Kouran - Fèy Reverse @ Vr : 8mA @ 20V
Operating Tanperati - Junction : -55°C ~ 150°C
Mounting Kalite : Chassis Mount
Pake / Ka : Twin Tower
Pake Aparèy Founisè : Twin Tower
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Kout Deskripsyon
DIODE MODULE 35V 200A 2TOWER
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
10808 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen MBR30035CT nan stock pou vann.
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