Espesifikasyon pou LTE-R38386-S

Nimewo pati : LTE-R38386-S
Fabricant : Lite-On Inc.
Deskripsyon : EMITTER IR 850NM 1A SMD
Seri : -
Estati Pati : Active
Kalite : Infrared (IR)
Kouran - DC Forward (Si) (Max) : 1A
Radyan Intensity (Ie) Min @ Si : 160mW/sr @ 1A
Longèdonn : 850nm
Voltage - Forward (Vf) (Tip) : 1.8V
Wè Ang : 90°
Oryantasyon : Top View
Operating Tanperati : -40°C ~ 85°C (TA)
Mounting Kalite : Surface Mount
Pake / Ka : 2-SMD, No Lead Exposed Pad
Pwa : -
kondisyon : Nouvo ak orijinal
Kalite Garanti : 365 jou garanti
stock Resous : Franchize Distribitè / Fabricant Dirèk
PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI
Fabricant Nimewo Pati
Entèn Nimewo Pati
Fabricant
Kout Deskripsyon
EMITTER IR 850NM 1A SMD
RoHS Ki dènye nouvèl
Plon gratis / RoHS Konfòm
akouchman Tan
1-2 jou
Disponib Kantite
186445 moso
referans pri
USD 0
pri nou
- (Tanpri kontakte nou pou yon pri pi bon: [email protected])

AXE Semiconductor gen LTE-R38386-S nan stock pou vann.
D 'opsyon ak anbake tan:
DHL: 2-3 days.
FEDEX: 2-3 days.
UPS: 2-4 days.
TNT: 3-5 days.
EMS: 5-8 days.
Normal Post: 10-15 days.
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pwodwi ki gen rapò pou LTE-R38386-S Lite-On Inc.

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