IXTX4N300P3HV PDF Mode Download - 2000V TO 3000V POLAR3 POWER MOSF

Espesifikasyon pou IXTX4N300P3HV

Nimewo pati : IXTX4N300P3HV

Fabricant : IXYS

Deskripsyon : 2000V TO 3000V POLAR3 POWER MOSF

Seri : -

Estati Pati : Active

FET Kalite : N-Channel

Teknoloji : MOSFET (Metal Oxide)

Drenaj nan Voltage Sous (Vdss) : 3000V

Kouran - Drenaj Kontinye (Id) @ 25 ° C : 4A (Tc)

Drive Voltage (Max Rds Sou, Min RDS Sou) : 10V

RD sou (Max) @ Id, Vgs : 12.5 Ohm @ 2A, 10V

Vgs (th) (Max) @ Id : 5V @ 250µA

Chaje Gate (Qg) (Max) @ Vgs : 139nC @ 10V

Vgs (Max) : ±20V

Antre kapasite (Ciss) (Max) @ Vds : 3680pF @ 25V

Karakteristik FET : -

Disipasyon Pouvwa (Max) : 960W (Tc)

Operating Tanperati : -55°C ~ 150°C (TJ)

Mounting Kalite : Through Hole

Pake Aparèy Founisè : TO-247PLUS-HV

Pake / Ka : TO-247-3 Variant

Pwa : -

kondisyon : Nouvo ak orijinal

Kalite Garanti : 365 jou garanti

stock Resous : Franchize Distribitè / Fabricant Dirèk

PEYI KOTE L SOTI : USA / TAIWAN / MEXICO / MALAYSIA / PHI

Fabricant Nimewo Pati

IXTX4N300P3HV

Entèn Nimewo Pati

AX-IXTX4N300P3HV

Fabricant

IXYS

Kout Deskripsyon

2000V TO 3000V POLAR3 POWER MOSF

RoHS Ki dènye nouvèl

Plon gratis / RoHS Konfòm

akouchman Tan

1-2 jou

Disponib Kantite

14376 moso

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AXE Semiconductor gen IXTX4N300P3HV nan stock pou vann.

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pwodwi ki gen rapò pou IXTX4N300P3HV IXYS

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IXTX4N300P3HV Mode

Espesifikasyon pou IXTX4N300P3HV

pwodwi ki gen rapò pou IXTX4N300P3HV IXYS